New Phonon

Manifestations of magneto-polaron effects in resonant Raman scattering in Transition Metal Dichalcogenides

Vladimir M. Fomin1,2, Darío G. Santiago-Pérez3, Dmitry V. Tkachenko4, Carlos Trallero-Giner5

Presenting Author:

v.fomin@ifw-dresden.de

The field of two-dimensional materials, particularly, Transition Metal Dichalcogenides (TMDs), has attracted increasing attention due to their unique properties that differ significantly from their bulk counterparts. These materials possess remarkable optical, electronic, magnetic, mechanical, and thermal characteristics, making them promising candidates for emerging technological applications [1]. There remain key issues regarding the dimensionality-governed properties of those materials, large-scale production, and their functionalization for sustainable applications. Recent investigations have highlighted the outstanding potential of TMDs in optoelectronics, photonics, and semiconductor technologies, underlying their prospective role in sustainable development, e. g., environmental applications and low-dissipation device architectures. First-order resonant Raman spectroscopy in an applied magnetic field is a unique method that allows for studying configurations of energy levels that facilitates development of applications of TMDs. We have discovered the behavior of the magneto-polaron (MP) resonances as a function of the phonon symmetry inherent in monolayer TMDs [2]. Many avoided-crossing points of energy branches assisted by an optical phonon in the MP spectrum, superposition of the electron and hole states in the emerging excitations, and their impact on optical transitions in various scattering configurations are specific for these two-dimensional structures [3]. The MP resonant scattering in a monolayer TMD is explored as a function of the laser intensity and the magnetic field. The MP resonant Raman intensity manifests three resonant splittings of double avoided-crossing levels. The three MP excitation branches occur by virtue of the coupling of electron and hole Landau levels to an out-of-plane A_1 optical phonon mode. The energy gaps at the anticrossing points in the MP Raman spectrum are determined for various electron and hole deformation potential constants. The derived explicit expressions for the resonant MP Raman efficiency as a function of the magnetic field allow us to explore the relative contribution of the conduction and valence bands in TMDs to the formation of MP excitation branches [4]. The obtained results provide a background for on-demand engineering of the MP effects in the magneto-optical properties of TMDs.

[1] C. Wang, F. Yang, Y. Gao, Nanoscale Adv. 2, 4323 (2020).
[2] C. Trallero-Giner, D. G. Santiago-Pérez, V. M. Fomin, Scientific Reports 13, 292 (2023).
[3] C. Trallero‐Giner, D. G. Santiago‐Pérez, D. V. Tkachenko, G. E. Marques, V. M. Fomin, Scientific Reports 14, 12857 (2024).
[4] C. Trallero-Giner, D. G. Santiago-Pérez D. V. Tkachenko, G. E. Marques, V. M. Fomin, Front. Phys. 12, 1440069 (2024).