In this lecture I will discuss the use of Raman spectroscopy to study phonons and electron-phonon interactions in 2D materials. I will start reviewing the Raman spectrum of graphene, showing that measurements performed by changing the energy of the incident photon provide information about the electronic structure and phonon dispersion of the material. I will then focus on the resonance Raman effect in twisted bilayer graphene (TBG), presenting experimental results performed in TBG samples with different twisting angles that allow the distinction between intralayer and interlayer electron-phonon (el-ph) interactions. I will then present results in 2D crystals of the transition metal dichalcogenide (TMD) family, starting with the semiconducting MoS₂ where we could observe symmetry dependent el-ph interactions and investigate the scattering of electrons by acoustic phonons between different valleys in the electronic structure.  Finally, I will present angle-resolved polarized Raman measurements in triclinic ReSe₂ and show that the Raman tensor elements for the different phonons are given by complex numbers due to the resonance Raman effect.